Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А. (2012) Mechanism of contact resistance formation in ohmic contacts with high dislocation density. Journal of Applied Physics, 111 (8). 083701-083701. ISSN 0021-8979
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Abstract
A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its specific feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current flowing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current flows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Its Teaching Methods |
| Depositing User: | С.В. Новицький |
| Date Deposited: | 03 Feb 2014 07:37 |
| Last Modified: | 15 Aug 2015 05:39 |
| URI: | http://eprints.zu.edu.ua/id/eprint/10520 |
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