Mechanism of contact resistance formation in ohmic contacts with high dislocation density

A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is
proposed. Its specific feature is the appearance of a characteristic region where the contact resistance
increases with temperature. According to the mechanism revealed, the current flowing through the
metal shunts associated with dislocations is determined by electron diffusion. It is shown that current
flows through the semiconductor near-surface regions where electrons accumulate. A feature of the
mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk
resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as
silicon-based materials. A reasonable agreement between theory and experimental results is obtained