Sachenko, А. V., Belyaev, А. Е., Boltovets, N. S., Konakova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). p. 49.
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Abstract
About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Its Teaching Methods |
| Depositing User: | С.В. Новицький |
| Date Deposited: | 03 Feb 2014 06:57 |
| Last Modified: | 15 Aug 2015 05:40 |
| URI: | http://eprints.zu.edu.ua/id/eprint/10538 |
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