Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). p. 49.
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Abstract
About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physics and Mathematics > Department of Physics and Labor Protection |
| Depositing User: | С.В. Новицький |
| Date Deposited: | 03 Feb 2014 06:57 |
| Last Modified: | 15 Aug 2015 05:40 |
| URI: | http://eprints.zu.edu.ua/id/eprint/10538 |
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