A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А. (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density. Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.). p. 49.

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Abstract

About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density

Item Type: Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Physics and Mathematics > Department of Physics and Labor Protection
Depositing User: С.В. Новицький
Date Deposited: 03 Feb 2014 06:57
Last Modified: 15 Aug 2015 05:40
URI: http://eprints.zu.edu.ua/id/eprint/10538

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