Будник, Т.
(2014)
Modeling of voltammetric characteristic for tunneling-resonant structure
based on AlGaAs/GaAs semiconductor.
Фахівець ХХІ століття: професійні мовні компетенції : матеріали Всеукраїнської науково-практичної конференції для студентів немовних спеціальностей.
pp. 15-17.
Abstract
Transport of charge carriers in low-dimensional structures is often caused
by tunneling effect. Tunneling means transiting of electron through the area limited
by the potential energy barrier higher than the energy of electron [1]. Tunneling of
electrons in low dimensional structures is determined not only by the energy of
potential barriers, but also by allowed energy states for electrons within the
structure.
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