Modeling of voltammetric characteristic for tunneling-resonant structure based on AlGaAs/GaAs semiconductor.

Будник, Т. (2014) Modeling of voltammetric characteristic for tunneling-resonant structure based on AlGaAs/GaAs semiconductor. Фахівець ХХІ століття: професійні мовні компетенції : матеріали Всеукраїнської науково-практичної конференції для студентів немовних спеціальностей. pp. 15-17.

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Abstract

Transport of charge carriers in low-dimensional structures is often caused by tunneling effect. Tunneling means transiting of electron through the area limited by the potential energy barrier higher than the energy of electron [1]. Tunneling of electrons in low dimensional structures is determined not only by the energy of potential barriers, but also by allowed energy states for electrons within the structure.

Item Type: Article
Subjects: T Technology > T Technology (General)
Divisions: Educational and Research Institute of Foreign Philology > Department of Foreign Languages and Modern Teaching Techniques
Depositing User: викладач О.О. Макаревич
Date Deposited: 16 Jun 2014 11:00
Last Modified: 15 Aug 2015 06:48
URI: http://eprints.zu.edu.ua/id/eprint/11501

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