Sachenko А. V., Belyaev А. Е., Boltovets N. S., Vіnogradov А. О., Pіlіpenкo V. А., Sheremet V. N.
(2014)
On a feature of temperature dependence of contact resistivity
for ohmic contacts to n-Si with an n+-n doping step.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1).
С. 1–6.
Анотація
We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation.
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