Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission

Zinovchuk, A. V., Tkachenko, A. K. (2011) Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission. Semiconductors, 45 (1). pp. 61-65. ISSN 1063-7826

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Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics and Its Teaching Methods
Depositing User: Богдан Свищ
Date Deposited: 30 Mar 2016 13:14
Last Modified: 30 Mar 2016 13:14
URI: http://eprints.zu.edu.ua/id/eprint/20653

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