A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides

Slipokurov, V. A., Korniychuk, P. P., Zinovchuk, A. V. (2023) A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides. Semiconductor Physics, Quantum Electronics & Optoelectronics, 26 (2). pp. 165-172. ISSN 1605-6582

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Abstract

The paper presents a method for fast calculating the electronic states in twodimensional quantum structures based on AIIIBV nitrides. The method is based on the representation of electronic states in the form of a linear combination of bulk wave functions of materials, from which quantum structures are made. The parameters and criteria for the selection of bulk wave functions that provides fast convergence of the numerical procedures for calculating the eigenvalues of the quantum Hamiltonian have been considered. The results of the calculations have been given both for one polar InGaN/GaN quantum well and for a system of several quantum wells. Being based on the full band structure of AIIIBV nitrides with a wurtzite-type crystal lattice, the proposed approach takes into account the states far from the center of the Brillouin zone, while preserving the computational efficiency of traditional methods of envelope function in approximating the effective mass.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics and Its Teaching Methods
Depositing User: Богдан Свищ
Date Deposited: 08 Feb 2024 10:59
Last Modified: 08 Feb 2024 10:59
URI: http://eprints.zu.edu.ua/id/eprint/38961

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