Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs

Malyutenko, V. K., Malyutenko, O. Y., Zinovchuk, A. V., Zakheіm, А. L. (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs. Proceedings of SPIE, 5941. 59411K-1. ISSN 9780819459466

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We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 μm spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.

Item Type: Article
Uncontrolled Keywords: InGaN/GaN, quantum wells, light-emitting diodes, thermal imaging.
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics and Its Teaching Methods
Depositing User: Богдан Свищ
Date Deposited: 21 Nov 2012 11:56
Last Modified: 10 Oct 2016 09:12

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