Malyutenko, V. K., Malyutenko, O. Y., Zinovchuk, A. V., Zakheіm, А. L.
(2005)
Remote temperature mapping of high-power InGaN/GaN MQW
flip-chip design LEDs.
Proceedings of SPIE, 5941.
59411K-1.
ISSN 9780819459466
Abstract
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and
temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting
devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 μm spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.
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