Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs

Malyutenko, V. K. and Malyutenko, O. Y. and Zinovchuk, A. V. and Zakheіm, А. L. (2005) Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs. Proceedings of SPIE, 5941. 59411K-1. ISSN 9780819459466

[img]
Preview
Text
Download (212kB) | Preview
Official URL: http://spie.org/

Abstract

We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 μm spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.

Item Type: Article
Uncontrolled Keywords: InGaN/GaN, quantum wells, light-emitting diodes, thermal imaging.
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics and Labor Protection
Depositing User: Богдан Свищ
Date Deposited: 21 Nov 2012 11:56
Last Modified: 10 Oct 2016 09:12
URI: http://eprints.zu.edu.ua/id/eprint/8341

Actions (login required)

View Item View Item