Malyutenko V. K., Zinovchuk A. V., Malyutenko O. Y.
(2008)
Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices.
Semiconductor Science and Technology, 23.
085004-1.
Анотація
Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3–5 μm band. Light
confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The
effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 μm emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.
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