Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices

Malyutenko, V. K. and Zinovchuk, A. V. and Malyutenko, O. Y. (2008) Bandgap dependence of current crowding effect in 3–5 μm InAsSb/InAs planar light emitting devices. Semiconductor Science and Technology, 23. 085004-1.

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Abstract

Electroluminescence power profiles and 2D micropatterns have been obtained from InAsSb/InAs planar LEDs tuned at several wavelengths within the 3–5 μm band. Light confined to a small region around the top opaque contact was observed (cw mode, I > 10 mA, T = 300 K). A computer simulation showed that the reason behind the decrease of the emitting area is the current crowding that ensures non-uniform injection into the active region. The effect becomes more apparent in longer wavelength devices (emitting areas of 3.4 and 4.2 μm emitting devices are related as >10 : 1), providing direct evidence that the current crowding is affected by the bandgap energy of an active layer.

Item Type: Article
Uncontrolled Keywords: current crowding, InAsSb/InAs, light emitting devices
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics
Depositing User: Богдан Свищ
Date Deposited: 21 Nov 2012 11:57
Last Modified: 10 Oct 2016 09:09
URI: http://eprints.zu.edu.ua/id/eprint/8344

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