Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs

Sorokіn, V. М. and Konakova, R. V. and Kudryk, Y. Y. and Zinovchuk, A. V. (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs. Semiconductor Physics, Quantum Electronics & Optoelectronics, 15 (12). pp. 124-128. ISSN 1605-6582

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Abstract

We present a setup and procedure of studying p-n junction–package thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated.

Item Type:	Article
Uncontrolled Keywords:	thermal resistance, light emitting diodes, nitrides
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Physics and Mathematics > Department of Physics and Labor Protection
Depositing User:	Богдан Свищ
Date Deposited:	21 Nov 2012 11:58
Last Modified:	10 Oct 2016 09:03
URI:	http://eprints.zu.edu.ua/id/eprint/8347

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