The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes

Kudryk, Y. Y. and Zinovchuk, A. V. (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes. Technical Physics Letters, 38 (5). pp. 14-20. ISSN 1090-6533

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Official URL: http://link.springer.com/journal/11455

Abstract

The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light- emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied. Calculations based on a modified model of recombination coefficients show that current crowding leads to a significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23% at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR LEDs.

Item Type: Article
Uncontrolled Keywords: Current Crowding, Light-Emitting Diodes,InAsSb/InAs
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics
Depositing User: Богдан Свищ
Date Deposited: 22 Apr 2016 08:53
Last Modified: 10 Oct 2016 09:00
URI: http://eprints.zu.edu.ua/id/eprint/8349

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