Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading

Kudryk, Y. Y. and Zinovchuk, A. V. (2011) Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading. Semiconductor Science and Technology, 26. 095007-1. ISSN 1361-6641

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Abstract

We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical model of internal quantum efficiency calculation is presented that takes into account nonuniform lateral carrier injection in the active region. Based on this model, we examine the effect of current crowding on the efficiency droop using comparison of simulated internal quantum efficiency of InGaN LEDs with low and high uniformity of current spreading. The results of simulations and measurements show that the devices with low uniformity of current spreading exhibit higher efficiency droop and lower roll-off current value.

Item Type: Article
Uncontrolled Keywords: Efficiency droop, InGaN/GaN, nonuniform current spreading
Subjects: Q Science > QC Physics
Divisions: Faculty of Physics and Mathematics > Department of Physics
Depositing User: Богдан Свищ
Date Deposited: 21 Nov 2012 12:10
Last Modified: 10 Oct 2016 09:08
URI: http://eprints.zu.edu.ua/id/eprint/8351

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