info:oai:eprints.zu.edu.ua:10538info:ofi/fmt:xml:xsd:journalSachenкoА. V.Sachenкo, А. V.BelyaevА. Е.Belyaev, А. Е.BoltovetsN. S.Boltovets, N. S.KonaкovaR. V.Konaкova, R. V.KudryкY. Y.Kudryк, Y. Y.NovytsкyіS. V.Novytsкyі, S. V.SheremetV. N.Sheremet, V. N.LіJ.Lі, J.VіtusevіchS. А.Vіtusevіch, S. А.July 2012A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation densityMaterials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.)49article