relation: http://eprints.zu.edu.ua/10538/
title: A new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density
creator: Sachenкo, А. V.
creator: Belyaev, А. Е.
creator: Boltovets, N. S.
creator: Konaкova, R. V.
creator: Kudryк, Y. Y.
creator: Novytsкyі, S. V.
creator: Sheremet, V. N.
creator: Lі, J.
creator: Vіtusevіch, S. А.
subject: QC Physics
subject: TK Electrical engineering. Electronics Nuclear engineering
description: About new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density 
publisher: Zurich, Switzerland
date: 2012-07
type: Article
type: PeerReviewed
format: text
language: uk
identifier: http://eprints.zu.edu.ua/10538/1/ICPS-contribution.pdf
identifier:   Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А.  (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density.  Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.).  p. 49.      
relation: http://sciconf.org/
language: english