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article
show
A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
english
About new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density
-
Sachenкo
А. V.
-
Belyaev
А. Е.
-
Boltovets
N. S.
-
Konaкova
R. V.
-
Kudryк
Y. Y.
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Novytsкyі
S. V.
-
Sheremet
V. N.
-
Lі
J.
-
Vіtusevіch
S. А.
pub
- QC
- TK
- sch_phy
public
2012-07
published
Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.)
Zurich, Switzerland
49
TRUE
http://sciconf.org/