eprintid: 10538
rev_number: 26
eprint_status: archive
userid: 11
dir: disk0/00/01/05/38
datestamp: 2014-02-03 06:57:54
lastmod: 2015-08-15 05:40:08
status_changed: 2014-02-03 06:57:54
type: article
metadata_visibility: show
title: A new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density
language: english
abstract: About new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density 
creators_name: Sachenкo, А. V.
creators_name: Belyaev, А. Е.
creators_name: Boltovets, N. S.
creators_name: Konaкova, R. V.
creators_name: Kudryк, Y. Y.
creators_name: Novytsкyі, S. V.
creators_name: Sheremet, V. N.
creators_name: Lі, J.
creators_name: Vіtusevіch, S. А.
ispublished: pub
subjects: QC
subjects: TK
divisions: sch_phy
full_text_status: public
date: 2012-07
date_type: published
publication: Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.)
publisher: Zurich, Switzerland
pagerange: 49
refereed: TRUE
official_url: http://sciconf.org/
citation:   Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Konaкova, R. V. and Kudryк, Y. Y. and Novytsкyі, S. V. and Sheremet, V. N. and Lі, J. and Vіtusevіch, S. А.  (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density.  Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.).  p. 49.      
document_url: http://eprints.zu.edu.ua/10538/1/ICPS-contribution.pdf