<oai_dc:dc xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
        <dc:relation>http://eprints.zu.edu.ua/11039/</dc:relation>
        <dc:title>Some methodological aspects of studying ohmic contacts to n-InP</dc:title>
        <dc:creator>Novytsкyі, S. V.</dc:creator>
        <dc:subject>QC Physics</dc:subject>
        <dc:subject>TK Electrical engineering. Electronics Nuclear engineering</dc:subject>
        <dc:description>About some methodological aspects of studying ohmic contacts to n-InP</dc:description>
        <dc:publisher>Ivano-Frankivsk</dc:publisher>
        <dc:date>2013-05</dc:date>
        <dc:type>Article</dc:type>
        <dc:type>PeerReviewed</dc:type>
        <dc:format>text</dc:format>
        <dc:language>uk</dc:language>
        <dc:identifier>http://eprints.zu.edu.ua/11039/1/1230001.pdf</dc:identifier>
        <dc:identifier>  Novytsкyі, S. V.  (2013) Some methodological aspects of studying ohmic contacts to n-InP.  materials of a conf. [XIV International conf. «Physics and technology of thin films and nanosystems» (ICPTTFN-XIV)], (Ivano-Frankivsk, Ukraine, 20—25 may 2013 y.).  p. 437.      </dc:identifier>
        <dc:language>english</dc:language></oai_dc:dc>