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        <dc:title>Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs</dc:title>
        <dc:creator>Sorokіn, V. М.</dc:creator>
        <dc:creator>Konakova, R. V.</dc:creator>
        <dc:creator>Kudryk, Y. Y.</dc:creator>
        <dc:creator>Zinovchuk, A. V.</dc:creator>
        <dc:subject>QC Physics</dc:subject>
        <dc:description>We present a setup and procedure of studying p-n junction–package thermal&#13;
resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of&#13;
LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and&#13;
LED chip are separated.</dc:description>
        <dc:publisher>Institute of Semiconductor Physics of Ukraine</dc:publisher>
        <dc:date>2012</dc:date>
        <dc:type>Article</dc:type>
        <dc:type>PeerReviewed</dc:type>
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        <dc:language>uk</dc:language>
        <dc:identifier>http://eprints.zu.edu.ua/8347/1/sqo%202012%20N2%20p124-128.pdf</dc:identifier>
        <dc:identifier>  Sorokіn, V. М. and Konakova, R. V. and Kudryk, Y. Y. and Zinovchuk, A. V.  (2012) Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs.  Semiconductor Physics, Quantum Electronics &amp; Optoelectronics, 15 (12).  pp. 124-128.  ISSN 1605-6582     </dc:identifier>
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