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archive
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2012-11-21 11:58:24
2016-10-10 09:03:18
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article
show
Technique and setup for diagnostics of p-n junction–package thermal resistance in high-power gallium nitride LEDs
english
We present a setup and procedure of studying p-n junction–package thermal
resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of
LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and
LED chip are separated.
thermal resistance, light emitting diodes, nitrides
Solid State Physics
-
Sorokіn
V. М.
-
Konakova
R. V.
-
Kudryk
Y. Y.
-
Zinovchuk
A. V.
pub
- QC
- sch_phy
public
2012
published
Semiconductor Physics, Quantum Electronics & Optoelectronics
15
12
Institute of Semiconductor Physics of Ukraine
124-128
TRUE
1605-6582
http://www.journal-spqeo.org.ua/