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        <dc:title>The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes</dc:title>
        <dc:creator>Kudryk, Y. Y.</dc:creator>
        <dc:creator>Zinovchuk, A. V.</dc:creator>
        <dc:subject>QC Physics</dc:subject>
        <dc:description>The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-&#13;
emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied.&#13;
Calculations based on a modified model of recombination coefficients show that current crowding leads to a&#13;
significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23%&#13;
at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding&#13;
should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR&#13;
LEDs.</dc:description>
        <dc:publisher>Springer</dc:publisher>
        <dc:date>2012</dc:date>
        <dc:type>Article</dc:type>
        <dc:type>PeerReviewed</dc:type>
        <dc:format>text</dc:format>
        <dc:language>uk</dc:language>
        <dc:identifier>http://eprints.zu.edu.ua/8349/1/TEPL456.pdf</dc:identifier>
        <dc:identifier>  Kudryk, Y. Y. and Zinovchuk, A. V.  (2012) The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes.  Technical Physics Letters, 38 (5).  pp. 14-20.  ISSN 1090-6533     </dc:identifier>
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