<mods:mods version="3.3" xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-3.xsd" xmlns:mods="http://www.loc.gov/mods/v3" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"><mods:titleInfo><mods:title>The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes</mods:title></mods:titleInfo><mods:name type="personal"><mods:namePart type="given">Y. Y.</mods:namePart><mods:namePart type="family">Kudryk</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:name type="personal"><mods:namePart type="given">A. V.</mods:namePart><mods:namePart type="family">Zinovchuk</mods:namePart><mods:role><mods:roleTerm type="text">author</mods:roleTerm></mods:role></mods:name><mods:abstract>The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-&#13;
emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied.&#13;
Calculations based on a modified model of recombination coefficients show that current crowding leads to a&#13;
significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23%&#13;
at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding&#13;
should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR&#13;
LEDs.</mods:abstract><mods:classification authority="lcc">QC Physics</mods:classification><mods:originInfo><mods:dateIssued encoding="iso8061">2012</mods:dateIssued></mods:originInfo><mods:originInfo><mods:publisher>Springer</mods:publisher></mods:originInfo><mods:genre>Article</mods:genre></mods:mods>