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2016-04-22 08:53:59
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article
show
The Effect of Current Crowding on the Internal Quantum Efficiency of InAsSb/InAs Light-Emitting Diodes
english
The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-
emitting diodes (LEDs) operating in the middle�infrared (mid�IR) range (λ = 3–5 μm) has been studied.
Calculations based on a modified model of recombination coefficients show that current crowding leads to a
significant decrease in the IQE of LEDs, which is especially pronounced in longer�wavelength devices (23%
at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding
should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR
LEDs.
Current Crowding, Light-Emitting Diodes,InAsSb/InAs
Solid State Physics
-
Kudryk
Y. Y.
-
Zinovchuk
A. V.
pub
- QC
- sch_phy
public
2012
published
Technical Physics Letters
38
5
Springer
14-20
TRUE
1090-6533
http://link.springer.com/journal/11455