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        <dc:title>Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding</dc:title>
        <dc:creator>Kudryk, Y. Y.</dc:creator>
        <dc:creator>Ткаченко, О. К.</dc:creator>
        <dc:creator>Zinovchuk, A. V.</dc:creator>
        <dc:subject>QC Physics</dc:subject>
        <dc:description>Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well&#13;
InGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is&#13;
analysed using the modified rate equation model that takes into account the current crowding&#13;
effect at different temperatures. The results of calculations are consistent with the fact that&#13;
droop in IQE at higher currents originates from Auger recombination increased by current&#13;
crowding. It is shown that unusual experimentally observed temperature dependence of the&#13;
efficiency droop can be explained by stronger lateral nonuniformity of carrier injection at low&#13;
temperatures without any assumptions about carrier delocalization from In-rich regions in&#13;
quantum wells.</dc:description>
        <dc:publisher>IOP Publishing</dc:publisher>
        <dc:date>2012</dc:date>
        <dc:type>Article</dc:type>
        <dc:type>PeerReviewed</dc:type>
        <dc:format>text</dc:format>
        <dc:language>uk</dc:language>
        <dc:identifier>http://eprints.zu.edu.ua/8353/1/0268-1242_27_5_055013.pdf</dc:identifier>
        <dc:identifier>  Kudryk, Y. Y. and Ткаченко, О. К. and Zinovchuk, A. V.  (2012) Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding.  Semiconductor Science Technology, 27 (5).       </dc:identifier>
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