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2016-10-10 09:07:30
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article
show
Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding
english
Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well
InGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is
analysed using the modified rate equation model that takes into account the current crowding
effect at different temperatures. The results of calculations are consistent with the fact that
droop in IQE at higher currents originates from Auger recombination increased by current
crowding. It is shown that unusual experimentally observed temperature dependence of the
efficiency droop can be explained by stronger lateral nonuniformity of carrier injection at low
temperatures without any assumptions about carrier delocalization from In-rich regions in
quantum wells.
efficiency droop, InGaN/GaN, current crowding
Solid State Physics
final
author
-
Kudryk
Y. Y.
-
Ткаченко
О. К.
-
Zinovchuk
A. V.
pub
- QC
- sch_phy
public
2012
published
Semiconductor Science Technology
27
5
IOP Publishing
TRUE
http://iopscience.iop.org