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	bibo:abstract "Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well\r\nInGaN/GaN light-emitting diodes (LEDs) has been investigated. IQE versus current relation is\r\nanalysed using the modified rate equation model that takes into account the current crowding\r\neffect at different temperatures. The results of calculations are consistent with the fact that\r\ndroop in IQE at higher currents originates from Auger recombination increased by current\r\ncrowding. It is shown that unusual experimentally observed temperature dependence of the\r\nefficiency droop can be explained by stronger lateral nonuniformity of carrier injection at low\r\ntemperatures without any assumptions about carrier delocalization from In-rich regions in\r\nquantum wells."^^xsd:string;
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