@article{zu210520, volume = {111}, number = {8}, author = {?. V. Sachen?o and ?. ?. Belyaev and N. S. Boltovets and R. V. Kona?ova and Y. Y. Kudry? and S. V. Novyts?y? and V. N. Sheremet and J. L? and S. ?. V?tusev?ch}, title = {Mechanism of contact resistance formation in ohmic contacts with high dislocation density}, publisher = {???????????? ???????? ??????}, journal = {Journal of Applied Physics}, pages = {083701--083701}, year = {2012}, url = {http://eprints.zu.edu.ua/10520/}, abstract = {A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is proposed. Its speci?c feature is the appearance of a characteristic region where the contact resistance increases with temperature. According to the mechanism revealed, the current ?owing through the metal shunts associated with dislocations is determined by electron diffusion. It is shown that current ?ows through the semiconductor near-surface regions where electrons accumulate. A feature of the mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as silicon-based materials. A reasonable agreement between theory and experimental results is obtained} }