relation: http://eprints.zu.edu.ua/10520/
title: Mechanism of contact resistance formation in ohmic contacts with high dislocation density
creator: Sachenкo, А. V.
creator: Belyaev, А. Е.
creator: Boltovets, N. S.
creator: Konaкova, R. V.
creator: Kudryк, Y. Y.
creator: Novytsкyі, S. V.
creator: Sheremet, V. N.
creator: Lі, J.
creator: Vіtusevіch, S. А.
subject: QC Фізика
subject: TK Радіотехніка. Атомна енергетика
description: A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is  proposed. Its specific feature is the appearance of a characteristic region where the contact resistance  increases with temperature. According to the mechanism revealed, the current flowing through the  metal shunts associated with dislocations is determined by electron diffusion. It is shown that current  flows through the semiconductor near-surface regions where electrons accumulate. A feature of the  mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk  resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as  silicon-based materials. A reasonable agreement between theory and experimental results is obtained
publisher: Американский институт физики
date: 2012
type: Стаття
type: PeerReviewed
format: text
language: uk
identifier: http://eprints.zu.edu.ua/10520/1/Sachenko%20A.V.%20%28Mechanism%20of%20contact%20resistance%20formation%20in%20ohmic%20contacts%20with%20high%20dislocation%20density%29%202012.pdf
identifier:   Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А.  (2012) Mechanism of contact resistance formation in ohmic contacts with high dislocation density.  Journal of Applied Physics, 111 (8).  083701-083701.  ISSN 0021-8979     
relation: ttp://jap.aip.org/
language: english