%0 Journal Article
%@ 0021-8979
%A Sachenкo, А. V.
%A Belyaev, А. Е.
%A Boltovets, N. S.
%A Konaкova, R. V.
%A Kudryк, Y. Y.
%A Novytsкyі, S. V.
%A Sheremet, V. N.
%A Lі, J.
%A Vіtusevіch, S. А.
%D 2012
%F zu2:10520
%I Американский институт физики
%J Journal of Applied Physics
%N 8
%P 083701-083701
%T Mechanism of contact resistance formation in ohmic contacts with high dislocation density
%U http://eprints.zu.edu.ua/10520/
%V 111
%X A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is  proposed. Its specific feature is the appearance of a characteristic region where the contact resistance  increases with temperature. According to the mechanism revealed, the current flowing through the  metal shunts associated with dislocations is determined by electron diffusion. It is shown that current  flows through the semiconductor near-surface regions where electrons accumulate. A feature of the  mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk  resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as  silicon-based materials. A reasonable agreement between theory and experimental results is obtained