TY  - JOUR
ID  - zu210520
UR  - ttp://jap.aip.org/
IS  - 8
A1  - Sachen?o, ?. V.
A1  - Belyaev, ?. ?.
A1  - Boltovets, N. S.
A1  - Kona?ova, R. V.
A1  - Kudry?, Y. Y.
A1  - Novyts?y?, S. V.
A1  - Sheremet, V. N.
A1  - L?, J.
A1  - V?tusev?ch, S. ?.
Y1  - 2012///
N2  - A new mechanism of contact resistance formation in ohmic contacts with high dislocation density is
proposed. Its speci?c feature is the appearance of a characteristic region where the contact resistance
increases with temperature. According to the mechanism revealed, the current ?owing through the
metal shunts associated with dislocations is determined by electron diffusion. It is shown that current
?ows through the semiconductor near-surface regions where electrons accumulate. A feature of the
mechanism is the realization of ohmic contact irrespective of the relation between the contact and bulk
resistances. The theory is proved for contacts formed to III-V semiconductor materials as well as
silicon-based materials. A reasonable agreement between theory and experimental results is obtained
PB  - ???????????? ???????? ??????
JF  - Journal of Applied Physics
VL  - 111
SN  - 0021-8979
TI  - Mechanism of contact resistance formation in ohmic contacts with high dislocation density
SP  - 083701
AV  - public
EP  - 083701
ER  -