relation: http://eprints.zu.edu.ua/10538/
title: A new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density
creator: Sachenкo, А. V.
creator: Belyaev, А. Е.
creator: Boltovets, N. S.
creator: Konaкova, R. V.
creator: Kudryк, Y. Y.
creator: Novytsкyі, S. V.
creator: Sheremet, V. N.
creator: Lі, J.
creator: Vіtusevіch, S. А.
subject: QC Фізика
subject: TK Радіотехніка. Атомна енергетика
description: About new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density 
publisher: Zurich, Switzerland
date: 2012-07
type: Стаття
type: PeerReviewed
format: text
language: uk
identifier: http://eprints.zu.edu.ua/10538/1/ICPS-contribution.pdf
identifier:   Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А.  (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density.  Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.).  с. 49.      
relation: http://sciconf.org/
language: english