%0 Journal Article
%A Sachenкo, А. V.
%A Belyaev, А. Е.
%A Boltovets, N. S.
%A Konaкova, R. V.
%A Kudryк, Y. Y.
%A Novytsкyі, S. V.
%A Sheremet, V. N.
%A Lі, J.
%A Vіtusevіch, S. А.
%D 2012
%F zu2:10538
%I Zurich, Switzerland
%J Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.)
%P 49
%T A new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density
%U http://eprints.zu.edu.ua/10538/
%X About new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density