TY  - JOUR
ID  - zu210538
UR  - http://sciconf.org/
A1  - Sachen?o, ?. V.
A1  - Belyaev, ?. ?.
A1  - Boltovets, N. S.
A1  - Kona?ova, R. V.
A1  - Kudry?, Y. Y.
A1  - Novyts?y?, S. V.
A1  - Sheremet, V. N.
A1  - L?, J.
A1  - V?tusev?ch, S. ?.
Y1  - 2012/07//
N2  - About new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density 
PB  - Zurich, Switzerland
JF  - Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July ? 3 August, 2012 y.)
TI  - A new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density
AV  - public
ER  -