%A ?. V. Sachen?o
%A ?. ?. Belyaev
%A N. S. Boltovets
%A R. V. Kona?ova
%A Y. Y. Kudry?
%A S. V. Novyts?y?
%A V. N. Sheremet
%A J. L?
%A S. ?. V?tusev?ch
%J Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July ? 3 August, 2012 y.)
%T A new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density
%X About new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density 
%P 49
%D 2012
%I Zurich, Switzerland
%L zu210538