eprintid: 10538
rev_number: 26
eprint_status: archive
userid: 11
dir: disk0/00/01/05/38
datestamp: 2014-02-03 06:57:54
lastmod: 2015-08-15 05:40:08
status_changed: 2014-02-03 06:57:54
type: article
metadata_visibility: show
title: A new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density
language: english
abstract: About new mechanism of contact resistance formation in ohmic contacts to  semiconductors with high dislocation density 
creators_name: Sachenкo, А. V.
creators_name: Belyaev, А. Е.
creators_name: Boltovets, N. S.
creators_name: Konaкova, R. V.
creators_name: Kudryк, Y. Y.
creators_name: Novytsкyі, S. V.
creators_name: Sheremet, V. N.
creators_name: Lі, J.
creators_name: Vіtusevіch, S. А.
ispublished: pub
subjects: QC
subjects: TK
divisions: sch_phy
full_text_status: public
date: 2012-07
date_type: published
publication: Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.)
publisher: Zurich, Switzerland
pagerange: 49
refereed: TRUE
official_url: http://sciconf.org/
citation:   Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Konaкova, R. V., Kudryк, Y. Y., Novytsкyі, S. V., Sheremet, V. N., Lі, J., Vіtusevіch, S. А.  (2012) A new mechanism of contact resistance formation in ohmic contacts to semiconductors with high dislocation density.  Materials of a conference [31st International Conference on the Physics of Semiconductors (ICPS 2012)], (Zurich, Switzerland, 29 July — 3 August, 2012 y.).  с. 49.      
document_url: http://eprints.zu.edu.ua/10538/1/ICPS-contribution.pdf