@article{zu211501,
           month = {???????},
           title = {Modeling of voltammetric characteristic for tunneling-resonant structure
based on AlGaAs/GaAs semiconductor.},
          author = {?. ??????},
       publisher = {??????????? ??? ??. ????? ??????},
            year = {2014},
           pages = {15--17},
         journal = {???????? ??? ????????: ?????????? ????? ??????????? : ????????? ?????????????? ???????-?????????? ??????????? ??? ????????? ???????? ??????????????},
             url = {http://eprints.zu.edu.ua/11501/},
        abstract = {Transport of charge carriers in low-dimensional structures is often caused 
by tunneling effect. Tunneling means transiting of electron through the area limited 
by the potential energy barrier higher than the energy of electron [1]. Tunneling of 
electrons in low dimensional structures is determined not only by the energy of 
potential barriers, but also by allowed energy states for electrons within the 
structure. }
}