TY  - JOUR
ID  - zu211501
UR  - http://eprints.zu.edu.ua/11501/
A1  - ??????, ?.
Y1  - 2014/04/15/
N2  - Transport of charge carriers in low-dimensional structures is often caused 
by tunneling effect. Tunneling means transiting of electron through the area limited 
by the potential energy barrier higher than the energy of electron [1]. Tunneling of 
electrons in low dimensional structures is determined not only by the energy of 
potential barriers, but also by allowed energy states for electrons within the 
structure. 
PB  - ??????????? ??? ??. ????? ??????
JF  - ???????? ??? ????????: ?????????? ????? ??????????? : ????????? ?????????????? ???????-?????????? ??????????? ??? ????????? ???????? ??????????????
TI  - Modeling of voltammetric characteristic for tunneling-resonant structure
based on AlGaAs/GaAs semiconductor.
SP  - 15
AV  - public
EP  - 17
ER  -