%A ?. ??????
%J ???????? ??? ????????: ?????????? ????? ??????????? : ????????? ?????????????? ???????-?????????? ??????????? ??? ????????? ???????? ??????????????
%T Modeling of voltammetric characteristic for tunneling-resonant structure
based on AlGaAs/GaAs semiconductor.
%X Transport of charge carriers in low-dimensional structures is often caused 
by tunneling effect. Tunneling means transiting of electron through the area limited 
by the potential energy barrier higher than the energy of electron [1]. Tunneling of 
electrons in low dimensional structures is determined not only by the energy of 
potential barriers, but also by allowed energy states for electrons within the 
structure. 
%P 15-17
%D 2014
%I ??????????? ??? ??. ????? ??????
%L zu211501