@article{zu214144,
          volume = {17},
          number = {1},
           title = {On a feature of temperature dependence of contact resistivity 
for ohmic contacts to n-Si with an n+-n doping step
},
          author = {?. V. Sachen?o and ?. ?. Belyaev and N. S. Boltovets and ?. ?. V?nogradov and V. ?. P?l?pen?o and V. N. Sheremet},
            year = {2014},
           pages = {1--6},
         journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics, 2014. V. 17, N 1. P. 1-6.},
             url = {http://eprints.zu.edu.ua/14144/},
        abstract = {We present both theoretical and experimental temperature dependences of contact resistivity {\ensuremath{\rho}}?(?) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation. }
}