relation: http://eprints.zu.edu.ua/14144/
title: On a feature of temperature dependence of contact resistivity   for ohmic contacts to n-Si with an n+-n doping step  
creator: Sachenкo, А. V.
creator: Belyaev, А. Е.
creator: Boltovets, N. S.
creator: Vіnogradov, А. О.
creator: Pіlіpenкo, V. А.
creator: Sheremet, V. N.
subject: QC Фізика
description: We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation. 
date: 2014
type: Стаття
type: PeerReviewed
format: text
language: uk
identifier: http://eprints.zu.edu.ua/14144/1/v17n1-2014-p001-006.pdf
identifier:   Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Vіnogradov, А. О., Pіlіpenкo, V. А., Sheremet, V. N.  (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step.  Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1).  с. 1-6.      
language: english