%0 Journal Article
%A Sachenкo, А. V.
%A Belyaev, А. Е.
%A Boltovets, N. S.
%A Vіnogradov, А. О.
%A Pіlіpenкo, V. А.
%A Sheremet, V. N.
%D 2014
%F zu2:14144
%J Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6.
%N 1
%P 1-6
%T On a feature of temperature dependence of contact resistivity   for ohmic contacts to n-Si with an n+-n doping step  
%U http://eprints.zu.edu.ua/14144/
%V 17
%X We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation.