TY  - JOUR
ID  - zu214144
UR  - http://eprints.zu.edu.ua/14144/
IS  - 1
A1  - Sachen?o, ?. V.
A1  - Belyaev, ?. ?.
A1  - Boltovets, N. S.
A1  - V?nogradov, ?. ?.
A1  - P?l?pen?o, V. ?.
A1  - Sheremet, V. N.
Y1  - 2014///
N2  - We present both theoretical and experimental temperature dependences of contact resistivity ??(?) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation. 
JF  - Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6.
VL  - 17
TI  - On a feature of temperature dependence of contact resistivity 
for ohmic contacts to n-Si with an n+-n doping step

SP  - 1
AV  - public
EP  - 6
ER  -