%A ?. V. Sachen?o
%A ?. ?. Belyaev
%A N. S. Boltovets
%A ?. ?. V?nogradov
%A V. ?. P?l?pen?o
%A V. N. Sheremet
%J Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6.
%T On a feature of temperature dependence of contact resistivity 
for ohmic contacts to n-Si with an n+-n doping step

%X We present both theoretical and experimental temperature dependences of contact resistivity ??(?) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation. 
%N 1
%P 1-6
%V 17
%D 2014
%L zu214144