eprintid: 14144
rev_number: 13
eprint_status: archive
userid: 1567
dir: disk0/00/01/41/44
datestamp: 2014-11-25 12:16:04
lastmod: 2015-08-15 10:28:28
status_changed: 2014-11-25 12:16:04
type: article
metadata_visibility: show
title: On a feature of temperature dependence of contact resistivity 
for ohmic contacts to n-Si with an n+-n doping step

language: english
abstract: We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation. 
creators_name: Sachenкo, А. V.
creators_name: Belyaev, А. Е.
creators_name: Boltovets, N. S.
creators_name: Vіnogradov, А. О.
creators_name: Pіlіpenкo, V. А.
creators_name: Sheremet, V. N.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2014
date_type: published
publication: Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6.
volume: 17
number: 1
pagerange: 1-6
refereed: TRUE
citation:   Sachenкo, А. V., Belyaev, А. Е., Boltovets, N. S., Vіnogradov, А. О., Pіlіpenкo, V. А., Sheremet, V. N.  (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step.  Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1).  с. 1-6.      
document_url: http://eprints.zu.edu.ua/14144/1/v17n1-2014-p001-006.pdf