eprintid: 16814
rev_number: 11
eprint_status: archive
userid: 65
dir: disk0/00/01/68/14
datestamp: 2015-04-07 21:56:30
lastmod: 2015-04-07 22:02:29
status_changed: 2015-04-07 21:56:30
type: article
metadata_visibility: show
title: Chemical treatment of Cd1-xMnxTe single crystals with Н2О2-HI-citric acid aqueous solutions
language: english
abstract: The process of CdTe and Cd1–xMnxTe dissolution in 30 % H2O2–HI–citric acid
solutions under reproducible hydrodynamic conditions has been studied. The equal
dissolution rate surfaces (Gibbs diagrams) have been plotted. Limiting stages of the
semiconductor dissolution process have been determined. Regions of polishing, selective
and unpolishing solutions in the mentioned system have been ascertained. The influence
of Mn concentrations in solid solutions on the etching rate and quality has been
established.
creators_name: Denysyuк, R. О.
creators_id: denisuk@zu.edu.ua
ispublished: pub
subjects: QD
divisions: sch_che
full_text_status: public
date: 2014
date_type: published
publication: Semiconductor Physics, Quantum Electronics & Optoelectronics
volume: 17
number: 1
pagerange: 21-24
refereed: TRUE
citation:   Denysyuк, R. О.  (2014) Chemical treatment of Cd1-xMnxTe single crystals with Н2О2-HI-citric acid aqueous solutions.  Semiconductor Physics, Quantum Electronics & Optoelectronics, 17 (1).  с. 21-24.      
document_url: http://eprints.zu.edu.ua/16814/1/v17n1-2014-p021-024.pdf