eprintid: 20653
rev_number: 17
eprint_status: archive
userid: 1567
dir: disk0/00/02/06/53
datestamp: 2016-03-30 13:14:07
lastmod: 2016-03-30 13:14:07
status_changed: 2016-03-30 13:14:07
type: article
metadata_visibility: show
title: Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission
language: english
creators_name: Zinovchuk, A. V.
creators_name: Tkachenko, A. K.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2011
date_type: published
publication: Semiconductors
volume: 45
number: 1
publisher: Springer
pagerange: 61-65
refereed: TRUE
issn: 1063-7826
citation:   Zinovchuk, A. V., Tkachenko, A. K.  (2011) Measurement of Surface Recombination Velocity and Bulk Lifetime in Si Wafers by the Kinetics of Excess Thermal Emission.  Semiconductors, 45 (1).  с. 61-65.  ISSN 1063-7826     
document_url: http://eprints.zu.edu.ua/20653/1/Semicnd1101024ZinovchukLO.pdf