%0 Journal Article
%@ 1077-3118
%A Malyutenko, V. K.
%A Malyutenko, O. Y.
%A Zinovchuk, A. V.
%D 2006
%F zu2:8286
%I American Institute of Physics
%J Applied Physics Letter
%K InAsSbP/InAs, light emitting diodes, dynamic scene projection 
%P 201114-201117
%T Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection
%U http://eprints.zu.edu.ua/8286/
%V 89
%X The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several  wavelengths inside the 3–5 mkm band were tested. Light pattern, radiation apparent temperature  Ta, thermal resistance, and self-heating details were characterized at T=300 K in microscale by  calibrated infrared cameras operating in the 3–5 and 8–12 mkm bands. The authors show that LEDs  dynamically simulate very hot Ta=750 K targets as well as cold objects and low observable. They  resume that low cost LEDs enable a platform for photonic scene projection devices able to compete  with thermal microemitter technology. Proposals on how to further increase LEDs performance are  given.