TY  - JOUR
ID  - zu28286
UR  - http://apl.aip.org/
A1  - Malyutenko, V. K.
A1  - Malyutenko, O. Y.
A1  - Zinovchuk, A. V.
Y1  - 2006///
N2  - The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several
wavelengths inside the 3?5 mkm band were tested. Light pattern, radiation apparent temperature
Ta, thermal resistance, and self-heating details were characterized at T=300 K in microscale by
calibrated infrared cameras operating in the 3?5 and 8?12 mkm bands. The authors show that LEDs
dynamically simulate very hot Ta=750 K targets as well as cold objects and low observable. They
resume that low cost LEDs enable a platform for photonic scene projection devices able to compete
with thermal microemitter technology. Proposals on how to further increase LEDs performance are
given.
PB  - American Institute of Physics
JF  - Applied Physics Letter
VL  - 89
KW  - InAsSbP/InAs
KW  -  light emitting diodes
KW  -  dynamic scene projection 
SN  - 1077-3118
TI  - Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3?5 mkm) dynamic scene projection
SP  - 201114
AV  - restricted
EP  - 201117
ER  -