eprintid: 8286
rev_number: 19
eprint_status: archive
userid: 1567
dir: disk0/00/00/82/86
datestamp: 2012-11-21 13:24:06
lastmod: 2024-07-18 11:04:33
status_changed: 2012-11-21 13:24:06
type: article
metadata_visibility: show
title: Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection
language: english
abstract: The InAsSbP/InAs light emitting diodes LEDs grown by liquid phase epitaxy and tuned at several
wavelengths inside the 3–5 mkm band were tested. Light pattern, radiation apparent temperature
Ta, thermal resistance, and self-heating details were characterized at T=300 K in microscale by
calibrated infrared cameras operating in the 3–5 and 8–12 mkm bands. The authors show that LEDs
dynamically simulate very hot Ta=750 K targets as well as cold objects and low observable. They
resume that low cost LEDs enable a platform for photonic scene projection devices able to compete
with thermal microemitter technology. Proposals on how to further increase LEDs performance are
given.
keywords: InAsSbP/InAs, light emitting diodes, dynamic scene projection 
coverage: Solid State Physics
creators_name: Malyutenko, V. K.
creators_name: Malyutenko, O. Y.
creators_name: Zinovchuk, A. V.
ispublished: pub
subjects: QC
divisions: sch_phy
full_text_status: public
date: 2006
date_type: published
publication: Applied Physics Letter
volume: 89
publisher: American Institute of Physics
pagerange: 201114-201117
refereed: TRUE
issn: 1077-3118
citation:   Malyutenko, V. K., Malyutenko, O. Y., Zinovchuk, A. V.  (2006) Room-temperature InAsSbP/InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5 mkm) dynamic scene projection.  Applied Physics Letter, 89.  с. 201114-201117.  ISSN 1077-3118     
document_url: http://eprints.zu.edu.ua/8286/1/GetPDFServlet.pdf