%0 Journal Article
%@ 9780819464668
%A Malyutenko, V. K.
%A Zinovchuk, A. V.
%D 2006
%F zu2:8338
%I International society for optics and photonics
%J Proceedings of SPIE
%K LEDs,IR dynamic scene simulation, apparent temperature
%P 63680D-1
%T Mid-infrared LEDs versus thermal emitters in IR dynamic scene simulation devices
%U http://eprints.zu.edu.ua/8338/
%V 6368
%X In a radical departure from conventional thermal emitter-based dynamic IR scene simulation devices, we have tested  InAsSbP/InAs LEDs grown by liquid phase epitaxy and tuned at several peak-emitting wavelengths inside the mid-IR  band. Light uniformity, radiation apparent temperature (Ta), thermal resistance, and self heating details were  characterized at T=300 K in the microscale by calibrated infrared cameras in the 3-5 mm (light pattern) and 8-12 μm  (heat pattern) bands. We show that LEDs are capable of simulating very hot (Ta ³740 K) targets as well as cold objects  and low observable with respect to a particular background. We resume that cost effective LEDs enable a platform for  photonic scene projection devices able to compete with thermal microemitter MEMS technology in testing and  stimulating very high-speed infrared sensors used for military and commercial applications. Proposals on how to further  increase LEDs performance are given.