TY  - JOUR
ID  - zu28338
UR  - http://spie.org/
A1  - Malyutenko, V. K.
A1  - Zinovchuk, A. V.
Y1  - 2006///
N2  - In a radical departure from conventional thermal emitter-based dynamic IR scene simulation devices, we have tested
InAsSbP/InAs LEDs grown by liquid phase epitaxy and tuned at several peak-emitting wavelengths inside the mid-IR
band. Light uniformity, radiation apparent temperature (Ta), thermal resistance, and self heating details were
characterized at T=300 K in the microscale by calibrated infrared cameras in the 3-5 mm (light pattern) and 8-12 ?m
(heat pattern) bands. We show that LEDs are capable of simulating very hot (Ta ³740 K) targets as well as cold objects
and low observable with respect to a particular background. We resume that cost effective LEDs enable a platform for
photonic scene projection devices able to compete with thermal microemitter MEMS technology in testing and
stimulating very high-speed infrared sensors used for military and commercial applications. Proposals on how to further
increase LEDs performance are given.
PB  - International society for optics and photonics
JF  - Proceedings of SPIE
VL  - 6368
KW  - LEDs
KW  - IR dynamic scene simulation
KW  -  apparent temperature
SN  - 9780819464668
TI  - Mid-infrared LEDs versus thermal emitters in IR dynamic scene simulation devices
SP  - 63680D
AV  - public
EP  - 1
ER  -